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Typical Performance Characteristics
2.4
Figure 1. On-Region Characteristics.
V GS = 10V
Figure 2. On-Resistance Variation with
Temperature.
2.2
2.1
9V
2.0
1.8
1.5
7V
8V
6V
5V
1.8
1.6
V GS = 10V
I D = 500mA
1.4
1.2
0.9
4V
1.2
V GS = 5V
I D = 50mA
1.0
0.6
0.8
0.3
V GS = 3V
0.6
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.4
-50
0
50
100
150
T J . Junction Temperature ( C)
3.0
V DS . Drain-Source Voltage (V)
Figure 3. On-Resistance Variation with
Gate Voltage and Drain Current.
V GS = 4V
o
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
5
V GS = 10V
T A = 125 C
2.5
2.0
1.5
4.5V
5V
6V
V GS = 7V
4
3
2
o
T A = 25 C
1.0
8V
9V
10V
1
o
T A = -55 C
o
0.5
0.0
0.5
1.0
1.5
2.0
0
0.0
0.5
1.0
1.5
2.0
3.5
I D . Drain-Source Current(A)
Figure 5. Transfer Characteristics
I D . Drain Current (A)
Figure 6. Gate Threshold Variation with
Temperature.
1.10
T A = -55( C)
3.0
V DS = 10V
o
1.05
V DS = V GS
T A = 25( C)
o
2.5
1.00
2.0
0.95
I D = 1mA
T A = 125( C)
1.5
1.0
0.5
o
0.90
0.85
0.80
I D = 0.25mA
0.0
0
1
2
3
4
5
6
7
8
9
10
0.75
-25
0
25
50
75
100
125
T J . Junction Temperature ( C)
V GS . Gate-Source Voltage (V)
? 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
3
o
www.fairchildsemi.com
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